120V High-side and Low-side Gate Driver
- Parameters
- Features
- Description
| Part Number | SY21664BSXD |
|---|
| Vin_min (V) | 8 |
|---|
| Vin_max (V) | 17 |
|---|
| Idrive_max (A) | 4 |
|---|
| MOSFET RON HS + LS(mΩ) typ. | |
|---|
| Features / Special Function | |
|---|
| Application | Telecom/Datacom/Half-bridge and Full-bridge Converters |
|---|
| Package | DFN4x4-8 |
|---|
- High Voltage Range up to 120 V
- 4A Sink and 4A Source Current
- VCC Operation Range from 8 V to 17 V
- CMOS/TTL Compatible
- 7.2ns Rise and 5.5ns Fall Time with 1000pF Load
- Fast Propagation Delay Time
- 5ns Delay Matching
- DFN4×4-8 package
- Industrial Standard
The SY21664B is a high voltage floating driver for directly driving high side and low side channels. The floating channel can be used to drive 120V N-channel MOSFET in high side configuration. Input logic is compatible with standard CMOS or TTL. Compact DFN4×4-8 package is utilized to minimize the peripheral circuit design.
Evaluation Board
Photo of evaluation board
Photo of evaluation board
Photo of evaluation board
The EVB_SY21664BSXD is intended for evaluating 120V high-side and low-side gate driver.
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