Dual 5A，High Speed, Low-Side Gate Drivers
- Parameters
- Features
- Description
| Part number | SQ33080BDAD |
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| Driving FETs type | Si MOS, IGBT, SiC MOS |
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| Channel(#) | 2 |
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| Input bias voltage (V) | 4.5 |
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| Output bias voltage (V) | 26 |
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| Sink/Source current (A) | 5A/5A |
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| Features | Channel enable,Negative input voltage |
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| Package | DFN3×3-8 |
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| Operating temperature range(°C) | -40 to 125 |
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| Functional safety category | |
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- Two Independent Gate-Driver Channels
- High-Current Drive Capability of ±5A
- -10V Handling Capability at Inputs
- Independent Enable Functions for Each Driver
- Input Logic Levels Independent of Supply
- Input Voltage Compatible with TTL and CMOS
- Hysteretic-logic Threshold for High Noise Immunity
- Power Supply Voltage Range from 4.5V to 26V Fast Rise and Fall Times
- Fast Propagation Delay Time
- 1ns(typical) Delay Matching between Two Channels
- Two Outputs can be Paralleled for Higher Drive Current
- Outputs Stay Low when Inputs Floating
- Operating Temperature Range: –40°C to +125°C
- Package: DFN3*3-8
Evaluation Board
Photo of evaluation board
Photo of evaluation board
The EVB_SQ33080BDAD is intended for evaluating Dual 5A，High Speed, Low-Side Gate Drivers
