40V High-side and Low-Side Gate Driver
- Parameters
- Features
- Description
| Part number | SY2A58638DAD |
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| Driving FETs type | Si MOS |
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| Channel(#) | |
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| Input bias voltage (V) | 4.4 |
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| Output bias voltage (V) | 14 |
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| Sink/Source current (A) | 0.75A/1.25A |
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| Features | UVP, Interlock |
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| Package | DFN3×3-8 |
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| Operating temperature range(°C) | -40 to 125 |
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| Functional safety category | |
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- High Voltage Range up to 40 V
- 0.75A Source and 1.25A Sink Current
- VCC Operation Range from 4.4V to 14V
- CMOS/TTL Compatible
- Fast Propagation Delay Time
- DFN3x3-8 Package
- AEC-Q100 Qualified
SY2A58638 is a high voltage floating driver for direct driving high side and low side channels. The floating channel can be used to drive 40V N-channel MOSFET in high side configuration. Input logic is compatible with standard CMOS or TTL. Compact DFN3X3-8 package is utilized to minimize the peripheral circuit design and the difficulty of PCB mounting.
Evaluation Board
Photo of evaluation board
Photo of evaluation board
Photo of evaluation board
The EVB_SY2A58638DAD is intended for evaluating 40V High-side and Low-Side Gate Driver SY2A58638DAD.