SQ33080BDAD

Dual 5A，High Speed, Low-Side Gate Drivers

Parameters
Features
Description

Part number	SQ33080BDAD
Driving FETs type	Si MOS, IGBT, SiC MOS
Channel(#)	2
Input bias voltage (V)	4.5
Output bias voltage (V)	26
Sink/Source current (A)	5A/5A
Features	Channel enable,Negative input voltage
Package	DFN3×3-8
Operating temperature range(°C)	-40 to 125
Functional safety category

Two Independent Gate-Driver Channels
High-Current Drive Capability of ±5A
-10V Handling Capability at Inputs
Independent Enable Functions for Each Driver
Input Logic Levels Independent of Supply
Input Voltage Compatible with TTL and CMOS
Hysteretic-logic Threshold for High Noise Immunity
Power Supply Voltage Range from 4.5V to 26V  Fast Rise and Fall Times
Fast Propagation Delay Time
1ns(typical) Delay Matching between Two Channels
Two Outputs can be Paralleled for Higher Drive Current
Outputs Stay Low when Inputs Floating
Operating Temperature Range: –40°C to +125°C
Package: DFN3*3-8

View More

Evaluation Board

Photo of evaluation board
Photo of evaluation board

EVB_SQ33080BDAD

The EVB_SQ33080BDAD is intended for evaluating Dual 5A，High Speed, Low-Side Gate Drivers

Technical Documentation

Title	Date
Silergy_Catalog_Q2_2026	2026-06-12