Isolated Dual-channel 5A/8A Gate Driver
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- Parameters
- Features
- Description
| Part number | SQ55800AHWP |
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| Driving FETs type | Si MOS, IGBT, SiC MOS |
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| Isolation rating | Reinforced(5700 Vrms) |
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| Channel(#) | 2 |
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| Input supply voltage (min)(V) | 3 |
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| Input supply voltage (max)(V) | 18 |
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| Output Vdd (min)(V) | 9.2 |
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| Output Vdd (max)(V) | 25 |
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| Sink/Source current (A) | 5A/8A |
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| Fast propagation delay time (ns) | 32 |
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| Features | High CMTI,Programmable dead time |
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| Package | SOP14W |
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| Operating temperature range(°C) | -40 to 125 |
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| Functional safety category | |
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- Insulation voltage: (SQ55800)
- 5700Vrms input-to-output Per UL1577
- ±1850V channel-to-channel
- Insulation voltage: (SQ55801)
- 2500Vrms input-to-output Per UL1577
- ±700V channel-to-channel
- CMTI Higher Than ±150V/ns
- Switching Parameters:
- 32ns Typical Propagation Delay
- 10ns Minimum Pulse Width
- 5ns Maximum Delay Matching
- 6ns Maximum Pulse-Width Distortion
- 5A Peak Source, 8A Peak Sink Output
- 3V to 18V Input Power Supply Range
- Up to 25V Output Power Supply
- Programmable Dead Time
- Isolation Barrier Life >40 Years
- Operating Temperature Range: –40°C to +125°C
- Package: SOP14W (SQ55800), DFN5*5-13 (SQ55801)
Evaluation Board
Photo of evaluation board
Photo of evaluation board
The EVB_SQ55800AHWP is intended for Isolated Dual-channel Gate Driver
