Isolated Dual-channel 5A/8A Gate Driver
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- Parameters
- Features
- Description
| Part number |
SQ55800AHWP |
| Driving FETs type |
Si MOS, IGBT, SiC MOS |
| Isolation rating |
Reinforced(5700 Vrms) |
| Channel(#) |
2 |
| Input supply voltage (min)(V) |
3 |
| Input supply voltage (max)(V) |
18 |
| Output Vdd (min)(V) |
9.2 |
| Output Vdd (max)(V) |
25 |
| Sink/Source current (A) |
5A/8A |
| Fast propagation delay time (ns) |
32 |
| Features |
High CMTI,Programmable dead time |
| Package |
SOP14W |
| Operating temperature range(°C) |
-40 to 125 |
| Functional safety category |
|
- Insulation voltage: (SQ55800)
- 5700Vrms input-to-output Per UL1577
- ±1850V channel-to-channel
- Insulation voltage: (SQ55801)
- 2500Vrms input-to-output Per UL1577
- ±700V channel-to-channel
- CMTI Higher Than ±150V/ns
- Switching Parameters:
- 32ns Typical Propagation Delay
- 10ns Minimum Pulse Width
- 5ns Maximum Delay Matching
- 6ns Maximum Pulse-Width Distortion
- 5A Peak Source, 8A Peak Sink Output
- 3V to 18V Input Power Supply Range
- Up to 25V Output Power Supply
- Programmable Dead Time
- Isolation Barrier Life >40 Years
- Operating Temperature Range: –40°C to +125°C
- Package: SOP14W (SQ55800), DFN5*5-13 (SQ55801)
Evaluation Board
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Photo of evaluation board
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Photo of evaluation board
The EVB_SQ55800AHWP is intended for Isolated Dual-channel Gate Driver
