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SY21664BSXD (SQ55664BSXD)

Production
120V High-side and Low-side Gate Driver
Datasheet
SY21664BSXD 120V High-side and Low-side Gate Driver Datasheet
Part number SY21664BSXD
Driving FETs type NMOS
Channel(#) 1
Input bias voltage (V) 12(typ)
Output bias voltage (V) 12
Sink/Source current (A) 4A/4A
Features CMOS/TTL compatiable, Fast propagation delay time
Package DFN4x4-8
Operating temperature range(°C) -40 to 140
Functional safety category QM
  • High Voltage Range up to 120 V
  • 4A Sink and 4A Source Current
  • VCC Operation Range from 8 V to 17 V
  • CMOS/TTL Compatible
  • 7.2ns Rise and 5.5ns Fall Time with 1000pF Load
  • Fast Propagation Delay Time
  • 5ns Delay Matching
  • DFN4×4-8 package
  • Industrial Standard

The SY21664B is a high voltage floating driver for directly driving high side and low side channels. The floating channel can be used to drive 120V N-channel MOSFET in high side configuration. Input logic is compatible with standard CMOS or TTL. Compact DFN4×4-8 package is utilized to minimize the peripheral circuit design.

 

Evaluation Board

  • 1

    Photo of evaluation board

  • 2

    Photo of evaluation board

  • 3

    Photo of evaluation board

EVB_SY21664BSXD

The EVB_SY21664BSXD is intended for evaluating 120V high-side and low-side gate driver SY21664BSXD.

Technical Documentation

Title Date
Silergy_Catalog_Q3_2026 2026-11-04
DFN4x4-8 2022-05-20